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| SMD Type MOS Field Effect Transistors 2SK2484 TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A) Low Ciss Ciss=1200pF TYP + .2 8 .7 -00.2 High Avalanche Capability Ratings +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) *1 Total Power Dissipation Ta = 25 Total Power Dissipation TC = 25 Channel Temperature Storage temperature Single Avalanche Current *2 Single Avalanche Energy *2 *1. PW 10is,Dduty cycle 1%. 0 Tch Tstg IAS EAS Symbol VDSS VGSS ID(DS) ID(pulse) PT Rating 900 30 5 10 1.5 75 150 -55 to +150 5 75 A mJ Unit V V A A W *2.Starting Tch=25 ,RG=25U,VGS=20V 5 .6 0 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type 2SK2484 Electrical Characteristics Ta = 25 Parameter Drain to Source On-state Resistance Gate Cut-off Voltage Forward Transfer Admittance Drain Cut-off Current Gate Leakage Current Input Capacitance Output Capacitance Feedback Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol Testconditons Transistors IC Min Typ 2.2 Max 2.8 3.5 Unit U V S RDS(on) VGS = 10 V, ID = 3.0 A VGS(off) VDS = 10 V, ID = 1 mA Yfs IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VF(S-D) trr Qrr VDS = 20 V, ID = 3.0 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 3.0 A VGS = 10 V VDD = 150 V RG = 10 U ID = 5.0 A VDD = 450 V VGS = 10 V IF = 5.0 A, VGS = 0 IF = 5.0 A, VGS = 0 di/dt = 50 A/ is 2.5 2.0 100 100 1200 170 30 20 10 70 15 40 7 17 1.0 670 3.5 iA nA pF pF pF ns ns ns ns nC V ns iC 2 www.kexin.com.cn |
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